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BUJ103AX,127

  • BUJ103AX,127
  • BUJ103AX,127

BUJ103AX,127

BUJ103AX,127

WeEn Semiconductors

BUJ103AX,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ103AX,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 26W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.34020 $1.701
BUJ103AX,127 Product Details

BUJ103AX,127 Overview


DC current gain in this device equals 12 @ 500mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 600mA, 3A.Device displays Collector Emitter Breakdown (400V maximal voltage).

BUJ103AX,127 Features


the DC current gain for this device is 12 @ 500mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A

BUJ103AX,127 Applications


There are a lot of WeEn Semiconductors BUJ103AX,127 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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