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2SA1514KT146S

2SA1514KT146S

2SA1514KT146S

ROHM Semiconductor

2SA1514KT146S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1514KT146S Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -120V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1514
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -5V
hFE Min 180
Continuous Collector Current -50mA
VCEsat-Max 0.5 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.139950 $5.13995
10 $4.849009 $48.49009
100 $4.574537 $457.4537
500 $4.315600 $2157.8
1000 $4.071321 $4071.321
2SA1514KT146S Product Details

2SA1514KT146S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 1mA, 10mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -50mA.Emitter base voltages of -5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.The part has a transition frequency of 140MHz.As a result, it can handle voltages as low as 120V volts.In extreme cases, the collector current can be as low as 50mA volts.

2SA1514KT146S Features


the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 140MHz

2SA1514KT146S Applications


There are a lot of ROHM Semiconductor 2SA1514KT146S applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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