2SCR574D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR574D3TL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.635760
$0.63576
10
$0.599774
$5.99774
100
$0.565824
$56.5824
500
$0.533796
$266.898
1000
$0.503581
$503.581
2SCR574D3TL1 Product Details
2SCR574D3TL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 1A.Device displays Collector Emitter Breakdown (80V maximal voltage).
2SCR574D3TL1 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 300mV @ 50mA, 1A
2SCR574D3TL1 Applications
There are a lot of ROHM Semiconductor 2SCR574D3TL1 applications of single BJT transistors.