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2SCR574D3TL1

2SCR574D3TL1

2SCR574D3TL1

ROHM Semiconductor

2SCR574D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR574D3TL1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 280MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.635760 $0.63576
10 $0.599774 $5.99774
100 $0.565824 $56.5824
500 $0.533796 $266.898
1000 $0.503581 $503.581
2SCR574D3TL1 Product Details

2SCR574D3TL1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 1A.Device displays Collector Emitter Breakdown (80V maximal voltage).

2SCR574D3TL1 Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 50mA, 1A

2SCR574D3TL1 Applications


There are a lot of ROHM Semiconductor 2SCR574D3TL1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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