TIP117 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
TIP117 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2017
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 4V
Current - Collector Cutoff (Max)
1mA ICBO
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max)
100V
Frequency - Transition
25MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.252250
$1.25225
10
$1.181368
$11.81368
100
$1.114499
$111.4499
500
$1.051413
$525.7065
1000
$0.991899
$991.899
TIP117 PBFREE Product Details
TIP117 PBFREE Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
TIP117 PBFREE Features
the DC current gain for this device is 1000 @ 1A 4V the vce saturation(Max) is 2.5V @ 8mA, 2A
TIP117 PBFREE Applications
There are a lot of Central Semiconductor Corp TIP117 PBFREE applications of single BJT transistors.