2SC4738-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC4738-Y,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Number of Pins
3
Operating Temperature
125°C TJ
Packaging
Cut Tape (CT)
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Power - Max
100mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.173886
$11.173886
10
$10.541403
$105.41403
100
$9.944720
$994.472
500
$9.381810
$4690.905
1000
$8.850765
$8850.765
2SC4738-Y,LF Product Details
2SC4738-Y,LF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.A maximum collector current of 150mA volts can be achieved.
2SC4738-Y,LF Features
the DC current gain for this device is 120 @ 2mA 6V the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 5V
2SC4738-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC4738-Y,LF applications of single BJT transistors.