50A02CH-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
50A02CH-TL-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
700mW
Pin Count
3
Power - Max
700mW
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
120mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
120mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
690MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6,000
$0.09150
$0.549
50A02CH-TL-H Product Details
50A02CH-TL-H Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 120mV @ 10mA, 100mA.Emitter base voltages of -5V can achieve high levels of efficiency.During maximum operation, collector current can be as low as 500mA volts.
50A02CH-TL-H Features
the DC current gain for this device is 200 @ 10mA 2V the vce saturation(Max) is 120mV @ 10mA, 100mA the emitter base voltage is kept at -5V
50A02CH-TL-H Applications
There are a lot of ON Semiconductor 50A02CH-TL-H applications of single BJT transistors.