FZT958TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT958TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-400V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
85MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT958
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
85MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
240mV @ 300mA, 1A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
85MHz
Collector Emitter Saturation Voltage
-170mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-500mA
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.161259
$3.161259
10
$2.982320
$29.8232
100
$2.813509
$281.3509
500
$2.654254
$1327.127
1000
$2.504013
$2504.013
FZT958TA Product Details
FZT958TA Overview
In this device, the DC current gain is 100 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -170mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 300mA, 1A.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In this part, there is a transition frequency of 85MHz.An input voltage of 400V volts is the breakdown voltage.Collector current can be as low as 500mA volts at its maximum.
FZT958TA Features
the DC current gain for this device is 100 @ 500mA 10V a collector emitter saturation voltage of -170mV the vce saturation(Max) is 240mV @ 300mA, 1A the emitter base voltage is kept at -6V the current rating of this device is -500mA a transition frequency of 85MHz
FZT958TA Applications
There are a lot of Diodes Incorporated FZT958TA applications of single BJT transistors.