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FZT789ATA

FZT789ATA

FZT789ATA

Diodes Incorporated

FZT789ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT789ATA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-2A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT789
Number of Elements 1
Element ConfigurationSingle
Power Dissipation3W
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 3A
Collector Emitter Breakdown Voltage25V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage-300mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -3A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7373 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.679680$0.67968
10$0.641208$6.41208
100$0.604913$60.4913
500$0.570672$285.336
1000$0.538370$538.37

FZT789ATA Product Details

FZT789ATA Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.Collector current can be as low as 3A volts at its maximum.

FZT789ATA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz

FZT789ATA Applications


There are a lot of Diodes Incorporated FZT789ATA applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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