FZT849TA Overview

DC current gain in this device equals 100 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 350mV, giving you a wide variety of design options.A VCE saturation (Max) of 350mV @ 300mA, 6.5A means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 7A.Emitter base voltages of 7V can achieve high levels of efficiency.This device has a current rating of 7A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.

FZT849TA Features

the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 100MHz

FZT849TA Applications

There are a lot of Diodes Incorporated FZT849TA applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface