2SA1186 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SA1186 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2007
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
100W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 3A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
10A
Transition Frequency
60MHz
Frequency - Transition
60MHz
Power Dissipation-Max (Abs)
100W
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.277313
$0.277313
10
$0.261616
$2.61616
100
$0.246807
$24.6807
500
$0.232837
$116.4185
1000
$0.219657
$219.657
2SA1186 Product Details
2SA1186 Overview
This device has a DC current gain of 50 @ 3A 4V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 500mA, 5A.As you can see, the part has a transition frequency of 60MHz.There is a 150V maximal voltage in the device due to collector-emitter breakdown.
2SA1186 Features
the DC current gain for this device is 50 @ 3A 4V the vce saturation(Max) is 2V @ 500mA, 5A a transition frequency of 60MHz
2SA1186 Applications
There are a lot of Sanken 2SA1186 applications of single BJT transistors.