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FJD5304DTF

  • FJD5304DTF
  • FJD5304DTF

FJD5304DTF

FJD5304DTF

ON Semiconductor

FJD5304DTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJD5304DTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 30W
Terminal Form GULL WING
Current Rating 4A
Base Part Number FJD5304
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 2.5A
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 12V
hFE Min 8
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.664279 $1.664279
10 $1.570074 $15.70074
100 $1.481202 $148.1202
500 $1.397361 $698.6805
1000 $1.318265 $1318.265
FJD5304DTF Product Details

FJD5304DTF Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2A 5V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 12V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.Single BJT transistor can take a breakdown input voltage of 400V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

FJD5304DTF Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 12V
the current rating of this device is 4A

FJD5304DTF Applications


There are a lot of ON Semiconductor FJD5304DTF applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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