2N3771G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N3771G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
150W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
30A
Frequency
200kHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N3771
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
200 kHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
30A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 15A 4V
Current - Collector Cutoff (Max)
10mA
Vce Saturation (Max) @ Ib, Ic
4V @ 6A, 30A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
0.2MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
15
Height
8.51mm
Length
39.37mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.77000
$6.77
10
$6.11500
$61.15
100
$5.06290
$506.29
500
$4.40874
$2204.37
1,000
$3.83987
$3.83987
2N3771G Product Details
2N3771G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 15A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 4V @ 6A, 30A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (30A).There is a transition frequency of 0.2MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
2N3771G Features
the DC current gain for this device is 15 @ 15A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 4V @ 6A, 30A the emitter base voltage is kept at 5V the current rating of this device is 30A a transition frequency of 0.2MHz
2N3771G Applications
There are a lot of ON Semiconductor 2N3771G applications of single BJT transistors.