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2N3771G

2N3771G

2N3771G

ON Semiconductor

2N3771G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3771G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 150W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 30A
Frequency 200kHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N3771
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 200 kHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 15A 4V
Current - Collector Cutoff (Max) 10mA
Vce Saturation (Max) @ Ib, Ic 4V @ 6A, 30A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 0.2MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.77000 $6.77
10 $6.11500 $61.15
100 $5.06290 $506.29
500 $4.40874 $2204.37
1,000 $3.83987 $3.83987
2N3771G Product Details

2N3771G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 15A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 4V @ 6A, 30A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (30A).There is a transition frequency of 0.2MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.

2N3771G Features


the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 6A, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 0.2MHz

2N3771G Applications


There are a lot of ON Semiconductor 2N3771G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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