MMBT2907AT-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT2907AT-7-F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MMBT2907A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-60V
Max Collector Current
-600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-1.6V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
-600mA
Turn On Time-Max (ton)
45ns
Height
900μm
Length
1.6mm
Width
800μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.06038
$0.18114
6,000
$0.05250
$0.315
15,000
$0.04463
$0.66945
30,000
$0.04200
$1.26
75,000
$0.03938
$2.9535
150,000
$0.03500
$5.25
MMBT2907AT-7-F Product Details
MMBT2907AT-7-F Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -1.6V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -600mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 200MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is -600mA volts.
MMBT2907AT-7-F Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of -1.6V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -600mA a transition frequency of 200MHz
MMBT2907AT-7-F Applications
There are a lot of Diodes Incorporated MMBT2907AT-7-F applications of single BJT transistors.