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MMBT2907AT-7-F

MMBT2907AT-7-F

MMBT2907AT-7-F

Diodes Incorporated

MMBT2907AT-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT2907AT-7-F Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -600mA
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MMBT2907A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -60V
Max Collector Current -600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage -60V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Continuous Collector Current -600mA
Turn On Time-Max (ton) 45ns
Height 900μm
Length 1.6mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06038 $0.18114
6,000 $0.05250 $0.315
15,000 $0.04463 $0.66945
30,000 $0.04200 $1.26
75,000 $0.03938 $2.9535
150,000 $0.03500 $5.25
MMBT2907AT-7-F Product Details

MMBT2907AT-7-F Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -1.6V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -600mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 200MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is -600mA volts.

MMBT2907AT-7-F Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMBT2907AT-7-F Applications


There are a lot of Diodes Incorporated MMBT2907AT-7-F applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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