MMBT3906FA-7B Overview

This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at -6V to gain high efficiency.A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.Maximum collector currents can be below 200mA volts.

MMBT3906FA-7B Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz

MMBT3906FA-7B Applications

There are a lot of Diodes Incorporated MMBT3906FA-7B applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter