FCX605TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FCX605TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FCX605
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
120V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
1A
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.399000
$0.399
10
$0.376415
$3.76415
100
$0.355109
$35.5109
500
$0.335008
$167.504
1000
$0.316045
$316.045
FCX605TA Product Details
FCX605TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at 10V for high efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.150MHz is present in the transition frequency.Breakdown input voltage is 120V volts.During maximum operation, collector current can be as low as 1A volts.
FCX605TA Features
the DC current gain for this device is 2000 @ 1A 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 150MHz
FCX605TA Applications
There are a lot of Diodes Incorporated FCX605TA applications of single BJT transistors.