CPH3116-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH3116-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
900mW
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
420MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
430mV @ 10mA, 500mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
1MHz
Transition Frequency
420MHz
Collector Emitter Saturation Voltage
-145mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
200
Height
900μm
Length
2.9mm
Width
1.6mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.09524
$0.28572
6,000
$0.09019
$0.54114
15,000
$0.08261
$1.23915
30,000
$0.07756
$2.3268
75,000
$0.07167
$5.37525
CPH3116-TL-E Product Details
CPH3116-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -145mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 430mV @ 10mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.420MHz is present in the transition frequency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 1A volts.
CPH3116-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -145mV the vce saturation(Max) is 430mV @ 10mA, 500mA the emitter base voltage is kept at -5V a transition frequency of 420MHz
CPH3116-TL-E Applications
There are a lot of ON Semiconductor CPH3116-TL-E applications of single BJT transistors.