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CPH3116-TL-E

CPH3116-TL-E

CPH3116-TL-E

ON Semiconductor

CPH3116-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

CPH3116-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 900mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 420MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 430mV @ 10mA, 500mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 1MHz
Transition Frequency 420MHz
Collector Emitter Saturation Voltage -145mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 200
Height 900μm
Length 2.9mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09524 $0.28572
6,000 $0.09019 $0.54114
15,000 $0.08261 $1.23915
30,000 $0.07756 $2.3268
75,000 $0.07167 $5.37525
CPH3116-TL-E Product Details

CPH3116-TL-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -145mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 430mV @ 10mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.420MHz is present in the transition frequency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 1A volts.

CPH3116-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -145mV
the vce saturation(Max) is 430mV @ 10mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 420MHz

CPH3116-TL-E Applications


There are a lot of ON Semiconductor CPH3116-TL-E applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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