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NSCT2907ALT1G

NSCT2907ALT1G

NSCT2907ALT1G

ON Semiconductor

NSCT2907ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSCT2907ALT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -60V
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.015085 $0.015085
500 $0.011092 $5.546
1000 $0.009243 $9.243
2000 $0.008480 $16.96
5000 $0.007925 $39.625
10000 $0.007372 $73.72
15000 $0.007130 $106.95
50000 $0.007011 $350.55
NSCT2907ALT1G Product Details

NSCT2907ALT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.A maximum collector current of 600mA volts can be achieved.

NSCT2907ALT1G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA

NSCT2907ALT1G Applications


There are a lot of ON Semiconductor NSCT2907ALT1G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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