NSCT2907ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSCT2907ALT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-60V
Max Power Dissipation
225mW
Power - Max
225mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.015085
$0.015085
500
$0.011092
$5.546
1000
$0.009243
$9.243
2000
$0.008480
$16.96
5000
$0.007925
$39.625
10000
$0.007372
$73.72
15000
$0.007130
$106.95
50000
$0.007011
$350.55
NSCT2907ALT1G Product Details
NSCT2907ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.A maximum collector current of 600mA volts can be achieved.
NSCT2907ALT1G Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA
NSCT2907ALT1G Applications
There are a lot of ON Semiconductor NSCT2907ALT1G applications of single BJT transistors.