NSS20300MR6T1G Overview
In this device, the DC current gain is 100 @ 1.5A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.When VCE saturation is 320mV @ 20mA, 2A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 20V volts.A maximum collector current of 3A volts can be achieved.
NSS20300MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 320mV @ 20mA, 2A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 100MHz
NSS20300MR6T1G Applications
There are a lot of ON Semiconductor NSS20300MR6T1G applications of single BJT transistors.
- Driver
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- Inverter
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- Interface
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- Muting
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