MPS6717RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS6717RLRAG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 250mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.15000
$0.15
500
$0.1485
$74.25
1000
$0.147
$147
1500
$0.1455
$218.25
2000
$0.144
$288
2500
$0.1425
$356.25
MPS6717RLRAG Product Details
MPS6717RLRAG Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 250mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
MPS6717RLRAG Features
the DC current gain for this device is 50 @ 250mA 1V the vce saturation(Max) is 500mV @ 10mA, 250mA a transition frequency of 50MHz
MPS6717RLRAG Applications
There are a lot of Rochester Electronics, LLC MPS6717RLRAG applications of single BJT transistors.