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PHE13003C,412

PHE13003C,412

PHE13003C,412

WeEn Semiconductors

PHE13003C,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13003C,412 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1.5A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.168000 $0.168
10 $0.158491 $1.58491
100 $0.149519 $14.9519
500 $0.141056 $70.528
1000 $0.133072 $133.072
PHE13003C,412 Product Details

PHE13003C,412 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PHE13003C,412 Features


the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A

PHE13003C,412 Applications


There are a lot of WeEn Semiconductors PHE13003C,412 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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