PHE13003C,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHE13003C,412 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Power - Max
2.1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 1A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1.5A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.168000
$0.168
10
$0.158491
$1.58491
100
$0.149519
$14.9519
500
$0.141056
$70.528
1000
$0.133072
$133.072
PHE13003C,412 Product Details
PHE13003C,412 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PHE13003C,412 Features
the DC current gain for this device is 5 @ 1A 2V the vce saturation(Max) is 1.5V @ 500mA, 1.5A
PHE13003C,412 Applications
There are a lot of WeEn Semiconductors PHE13003C,412 applications of single BJT transistors.