PHE13003C,412 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PHE13003C,412 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
PHE13003C,412 Applications
There are a lot of WeEn Semiconductors PHE13003C,412 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
