MJD243 Overview

In this device, the DC current gain is 40 @ 200mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.A transition frequency of 40MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

MJD243 Features

the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz

MJD243 Applications

There are a lot of ON Semiconductor MJD243 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting