ZTX1149A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX1149A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
135MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX1149A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
135MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 70mA, 3A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
135MHz
Collector Emitter Saturation Voltage
-200mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-3A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.972579
$2.972579
10
$2.804320
$28.0432
100
$2.645585
$264.5585
500
$2.495835
$1247.9175
1000
$2.354561
$2354.561
ZTX1149A Product Details
ZTX1149A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 500mA 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 70mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 135MHz.This device can take an input voltage of 25V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
ZTX1149A Features
the DC current gain for this device is 250 @ 500mA 2V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 300mV @ 70mA, 3A the emitter base voltage is kept at -5V the current rating of this device is -3A a transition frequency of 135MHz
ZTX1149A Applications
There are a lot of Diodes Incorporated ZTX1149A applications of single BJT transistors.