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ZTX549

ZTX549

ZTX549

Diodes Incorporated

ZTX549 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX549 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX549
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage-500mV
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Height 4.95mm
Length 4.95mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10700 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.154103$0.154103
10$0.145380$1.4538
100$0.137151$13.7151
500$0.129388$64.694
1000$0.122065$122.065

ZTX549 Product Details

ZTX549 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.When VCE saturation is 750mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 1A volts.

ZTX549 Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz

ZTX549 Applications


There are a lot of Diodes Incorporated ZTX549 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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