2SD1624S-TD-E Overview
This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 50V volts.Maximum collector currents can be below 3A volts.
2SD1624S-TD-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1624S-TD-E Applications
There are a lot of ON Semiconductor 2SD1624S-TD-E applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
