ZTX550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX550 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-45V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX550
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-250mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.67000
$0.67
10
$0.57900
$5.79
100
$0.43960
$43.96
500
$0.35140
$175.7
1,000
$0.27790
$0.2779
ZTX550 Product Details
ZTX550 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of -250mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 150MHz.Collector current can be as low as 1A volts at its maximum.
ZTX550 Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 15mA, 150mA the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 150MHz
ZTX550 Applications
There are a lot of Diodes Incorporated ZTX550 applications of single BJT transistors.