BC848C RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC848C RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.240810
$0.24081
10
$0.227179
$2.27179
100
$0.214320
$21.432
500
$0.202189
$101.0945
1000
$0.190744
$190.744
BC848C RFG Product Details
BC848C RFG Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package SOT-23 comes with the product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
BC848C RFG Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 500mV @ 5mA, 100mA the supplier device package of SOT-23
BC848C RFG Applications
There are a lot of Taiwan Semiconductor Corporation BC848C RFG applications of single BJT transistors.