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ZTX692BSTZ

ZTX692BSTZ

ZTX692BSTZ

Diodes Incorporated

ZTX692BSTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX692BSTZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Supplier Device Package E-Line (TO-92 compatible)
Weight 453.59237mg
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Voltage - Rated DC 70V
Max Power Dissipation 1W
Current Rating 1A
Frequency 150MHz
Base Part Number ZTX692B
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Power - Max 1W
Gain Bandwidth Product 150MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 1A
Collector Emitter Breakdown Voltage 70V
Voltage - Collector Emitter Breakdown (Max) 70V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.45090 $0.9018
ZTX692BSTZ Product Details

ZTX692BSTZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 500mA 2V DC current gain.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.Supplier package E-Line (TO-92 compatible) contains the product.Collector Emitter Breakdown occurs at 70VV - Maximum voltage.Collector current can be as low as 1A volts at its maximum.

ZTX692BSTZ Features


the DC current gain for this device is 400 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of E-Line (TO-92 compatible)

ZTX692BSTZ Applications


There are a lot of Diodes Incorporated ZTX692BSTZ applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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