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ZTX757STZ

ZTX757STZ

ZTX757STZ

Diodes Incorporated

ZTX757STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX757STZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingTape & Box (TB)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.29.00.95
Voltage - Rated DC -300V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX757
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage300V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 30MHz
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:26541 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.296970$0.29697
10$0.280160$2.8016
100$0.264302$26.4302
500$0.249341$124.6705
1000$0.235228$235.228

ZTX757STZ Product Details

ZTX757STZ Overview


In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

ZTX757STZ Features


the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz

ZTX757STZ Applications


There are a lot of Diodes Incorporated ZTX757STZ applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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