ZTX757STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX757STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.29.00.95
Voltage - Rated DC
-300V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX757
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.296970
$0.29697
10
$0.280160
$2.8016
100
$0.264302
$26.4302
500
$0.249341
$124.6705
1000
$0.235228
$235.228
ZTX757STZ Product Details
ZTX757STZ Overview
In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
ZTX757STZ Features
the DC current gain for this device is 50 @ 100mA 5V the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 30MHz
ZTX757STZ Applications
There are a lot of Diodes Incorporated ZTX757STZ applications of single BJT transistors.