ZTX795ASTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZTX795ASTZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.29.00.75
Voltage - Rated DC
-140V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX795A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
140V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-140V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ZTX795ASTZ Product Details
ZTX795ASTZ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 10mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).For high efficiency, the continuous collector voltage must be kept at -500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 100MHz.Maximum collector currents can be below 500mA volts.
ZTX795ASTZ Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 250mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 100MHz
ZTX795ASTZ Applications
There are a lot of Diodes Incorporated ZTX795ASTZ applications of single BJT transistors.