BDP954H6327XTSA1 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The part has a transition frequency of 100MHz.During maximum operation, collector current can be as low as 3A volts.

BDP954H6327XTSA1 Features

the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BDP954H6327XTSA1 Applications

There are a lot of Infineon Technologies BDP954H6327XTSA1 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter