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NSCT817-25LT3G

NSCT817-25LT3G

NSCT817-25LT3G

Rochester Electronics, LLC

NSCT817-25LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

NSCT817-25LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 225mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.02000 $0.02
500 $0.0198 $9.9
1000 $0.0196 $19.6
1500 $0.0194 $29.1
2000 $0.0192 $38.4
2500 $0.019 $47.5
NSCT817-25LT3G Product Details

NSCT817-25LT3G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).There is no device package available from the supplier for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

NSCT817-25LT3G Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)

NSCT817-25LT3G Applications


There are a lot of Rochester Electronics, LLC NSCT817-25LT3G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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