MJ15025G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJ15025G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-250V
Max Power Dissipation
250W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Current Rating
-16A
Frequency
4MHz
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 8A 4V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
15
Height
8.51mm
Length
39.37mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.97000
$6.97
10
$6.29600
$62.96
100
$5.21230
$521.23
500
$4.53878
$2269.39
MJ15025G Product Details
MJ15025G Overview
DC current gain in this device equals 15 @ 8A 4V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.4V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -16A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15025G Features
the DC current gain for this device is 15 @ 8A 4V a collector emitter saturation voltage of 1.4V the vce saturation(Max) is 4V @ 3.2A, 16A the emitter base voltage is kept at 5V the current rating of this device is -16A a transition frequency of 4MHz
MJ15025G Applications
There are a lot of ON Semiconductor MJ15025G applications of single BJT transistors.