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MJ15025G

MJ15025G

MJ15025G

ON Semiconductor

MJ15025G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJ15025G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation 250W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Current Rating -16A
Frequency 4MHz
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 4MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A 4V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.97000 $6.97
10 $6.29600 $62.96
100 $5.21230 $521.23
500 $4.53878 $2269.39
1,000 $3.95312 $3.95312
MJ15025G Product Details

MJ15025G Overview


DC current gain in this device equals 15 @ 8A 4V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.4V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -16A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.

MJ15025G Features


the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz

MJ15025G Applications


There are a lot of ON Semiconductor MJ15025G applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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