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ZTX853

ZTX853

ZTX853

Diodes Incorporated

ZTX853 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

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ZTX853 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number ZTX853
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 160mV
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current 4A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.13000 $1.13
10 $1.02200 $10.22
100 $0.81070 $81.07
500 $0.68046 $340.23
1,000 $0.55025 $0.55025
ZTX853 Product Details

ZTX853 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.As it features a collector emitter saturation voltage of 160mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 130MHz in the part.When collector current reaches its maximum, it can reach 4A volts.

ZTX853 Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz

ZTX853 Applications


There are a lot of Diodes Incorporated ZTX853 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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