SBC846BWT1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Breakdown input voltage is 65V volts.During maximum operation, collector current can be as low as 100mA volts.
SBC846BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BWT1G Applications
There are a lot of ON Semiconductor SBC846BWT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
