BC849BE6327HTSA1 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 250MHz.Input voltage breakdown is available at 30V volts.The maximum collector current is 100mA volts.
BC849BE6327HTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC849BE6327HTSA1 Applications
There are a lot of Infineon Technologies BC849BE6327HTSA1 applications of single BJT transistors.
- Inverter
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- Muting
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- Driver
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- Interface
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