STR2550 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.As a result, it can handle voltages as low as 500V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics STR2550 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
