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BC857C RFG

BC857C RFG

BC857C RFG

Taiwan Semiconductor Corporation

BC857C RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC857C RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.029400 $0.0294
500 $0.021618 $10.809
1000 $0.018015 $18.015
2000 $0.016527 $33.054
5000 $0.015446 $77.23
10000 $0.014368 $143.68
15000 $0.013896 $208.44
50000 $0.013664 $683.2
BC857C RFG Product Details

BC857C RFG Overview


In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Product comes in SOT-23 supplier package.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BC857C RFG Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of SOT-23

BC857C RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC857C RFG applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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