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ZTX957

ZTX957

ZTX957

Diodes Incorporated

ZTX957 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX957 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation1.2W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 85MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX957
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.2W
Gain Bandwidth Product85MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 300mA, 1A
Collector Emitter Breakdown Voltage300V
Transition Frequency 85MHz
Collector Emitter Saturation Voltage-140mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 330V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11588 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.787198$0.787198
10$0.742640$7.4264
100$0.700604$70.0604
500$0.660947$330.4735
1000$0.623535$623.535

ZTX957 Product Details

ZTX957 Overview


This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -140mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 300mA, 1A.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.85MHz is present in the transition frequency.Input voltage breakdown is available at 300V volts.A maximum collector current of 1A volts can be achieved.

ZTX957 Features


the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 200mV @ 300mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 85MHz

ZTX957 Applications


There are a lot of Diodes Incorporated ZTX957 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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