ZTX957 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX957 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
1.2W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
85MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX957
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Gain Bandwidth Product
85MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 300mA, 1A
Collector Emitter Breakdown Voltage
300V
Transition Frequency
85MHz
Collector Emitter Saturation Voltage
-140mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
330V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.787198
$0.787198
10
$0.742640
$7.4264
100
$0.700604
$70.0604
500
$0.660947
$330.4735
1000
$0.623535
$623.535
ZTX957 Product Details
ZTX957 Overview
This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -140mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 300mA, 1A.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.85MHz is present in the transition frequency.Input voltage breakdown is available at 300V volts.A maximum collector current of 1A volts can be achieved.
ZTX957 Features
the DC current gain for this device is 100 @ 500mA 10V a collector emitter saturation voltage of -140mV the vce saturation(Max) is 200mV @ 300mA, 1A the emitter base voltage is kept at -6V the current rating of this device is -1A a transition frequency of 85MHz
ZTX957 Applications
There are a lot of Diodes Incorporated ZTX957 applications of single BJT transistors.