2SA1577T106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1577T106Q Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1577
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
32V
Transition Frequency
200MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
Continuous Collector Current
-500mA
VCEsat-Max
0.4 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.039240
$0.03924
500
$0.028853
$14.4265
1000
$0.024044
$24.044
2000
$0.022059
$44.118
5000
$0.020616
$103.08
10000
$0.019177
$191.77
15000
$0.018547
$278.205
50000
$0.018237
$911.85
2SA1577T106Q Product Details
2SA1577T106Q Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 200MHz is present in the part.Single BJT transistor can be broken down at a voltage of 32V volts.The maximum collector current is 500mA volts.
2SA1577T106Q Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 200MHz
2SA1577T106Q Applications
There are a lot of ROHM Semiconductor 2SA1577T106Q applications of single BJT transistors.