2SA1577T106Q Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 200MHz is present in the part.Single BJT transistor can be broken down at a voltage of 32V volts.The maximum collector current is 500mA volts.
2SA1577T106Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1577T106Q Applications
There are a lot of ROHM Semiconductor 2SA1577T106Q applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
