SMMBTA56LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBTA56LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
50MHz
Base Part Number
MMBTA56
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Power - Max
225mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
4V
hFE Min
100
Height
1.11mm
Length
3.04mm
Width
2.64mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.138480
$0.13848
10
$0.130642
$1.30642
100
$0.123247
$12.3247
500
$0.116270
$58.135
1000
$0.109689
$109.689
SMMBTA56LT1G Product Details
SMMBTA56LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 4V, an efficient operation can be achieved.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 500mA volts can be achieved.
SMMBTA56LT1G Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 4V a transition frequency of 50MHz
SMMBTA56LT1G Applications
There are a lot of ON Semiconductor SMMBTA56LT1G applications of single BJT transistors.