SMMBTA56LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 4V, an efficient operation can be achieved.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 500mA volts can be achieved.

SMMBTA56LT1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 50MHz

SMMBTA56LT1G Applications

There are a lot of ON Semiconductor SMMBTA56LT1G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting