2SA1955FVBTPL3Z Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -30mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 200mA.A breakdown input voltage of 12V volts can be used.Supplier device package VESM comes with the product.There is a 12V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 400mA volts can be achieved.

2SA1955FVBTPL3Z Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the supplier device package of VESM

2SA1955FVBTPL3Z Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting