2SA1955FVBTPL3Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SA1955FVBTPL3Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Polarity
PNP
Element Configuration
Single
Power - Max
100mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
400mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
12V
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
400mA
Collector Emitter Saturation Voltage
-30mV
Max Breakdown Voltage
12V
Frequency - Transition
130MHz
hFE Min
300
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
8,000
$0.06757
$0.54056
2SA1955FVBTPL3Z Product Details
2SA1955FVBTPL3Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -30mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 200mA.A breakdown input voltage of 12V volts can be used.Supplier device package VESM comes with the product.There is a 12V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 400mA volts can be achieved.
2SA1955FVBTPL3Z Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of -30mV the vce saturation(Max) is 250mV @ 10mA, 200mA the supplier device package of VESM
2SA1955FVBTPL3Z Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z applications of single BJT transistors.