MMBTA06LT3G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Breakdown input voltage is 80V volts.Maximum collector currents can be below 500mA volts.
MMBTA06LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06LT3G Applications
There are a lot of ON Semiconductor MMBTA06LT3G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
