MJE350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE350 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
20W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.67000
$0.67
50
$0.53360
$26.68
100
$0.42690
$42.69
500
$0.33542
$167.71
1,000
$0.25918
$0.25918
2,500
$0.23631
$0.47262
5,000
$0.22107
$1.10535
MJE350 Product Details
MJE350 Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.The device has a 300V maximal voltage - Collector Emitter Breakdown.
MJE350 Features
the DC current gain for this device is 30 @ 50mA 10V
MJE350 Applications
There are a lot of Rochester Electronics, LLC MJE350 applications of single BJT transistors.