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MJE350

MJE350

MJE350

Rochester Electronics, LLC

MJE350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJE350 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Transistor Element Material SILICON
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 20W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 500mA
RoHS StatusNon-RoHS Compliant
In-Stock:11885 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.67000$0.67
50$0.53360$26.68
100$0.42690$42.69
500$0.33542$167.71

MJE350 Product Details

MJE350 Overview


This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.The device has a 300V maximal voltage - Collector Emitter Breakdown.

MJE350 Features


the DC current gain for this device is 30 @ 50mA 10V

MJE350 Applications


There are a lot of Rochester Electronics, LLC MJE350 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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