MPS6726 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPS6726 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.542720
$0.54272
10
$0.512000
$5.12
100
$0.483019
$48.3019
500
$0.455678
$227.839
1000
$0.429885
$429.885
MPS6726 Product Details
MPS6726 Overview
In this device, the DC current gain is 50 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 1A volts is possible.
MPS6726 Features
the DC current gain for this device is 50 @ 1A 1V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 50MHz
MPS6726 Applications
There are a lot of ON Semiconductor MPS6726 applications of single BJT transistors.