BCP56-16T3G Overview

This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.The maximum collector current is 1A volts.

BCP56-16T3G Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

BCP56-16T3G Applications

There are a lot of ON Semiconductor BCP56-16T3G applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter