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ZUMT717TA

ZUMT717TA

ZUMT717TA

Diodes Incorporated

ZUMT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZUMT717TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.25A
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZUMT717
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 220MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 1.25A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 1.25A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage -185mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1.25A
Height 1mm
Length 2.2mm
Width 1.26mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.42000 $0.42
500 $0.4158 $207.9
1000 $0.4116 $411.6
1500 $0.4074 $611.1
2000 $0.4032 $806.4
2500 $0.399 $997.5
ZUMT717TA Product Details

ZUMT717TA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.A collector emitter saturation voltage of -185mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 240mV @ 100mA, 1.25A.Continuous collector voltages should be kept at -1.25A to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1.25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 220MHz.Breakdown input voltage is 12V volts.During maximum operation, collector current can be as low as 1.25A volts.

ZUMT717TA Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 240mV @ 100mA, 1.25A
the emitter base voltage is kept at 5V
the current rating of this device is -1.25A
a transition frequency of 220MHz

ZUMT717TA Applications


There are a lot of Diodes Incorporated ZUMT717TA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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