ZUMT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZUMT717TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-12V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1.25A
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZUMT717
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
220MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
1.25A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 1.25A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
220MHz
Collector Emitter Saturation Voltage
-185mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1.25A
Height
1mm
Length
2.2mm
Width
1.26mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.42000
$0.42
500
$0.4158
$207.9
1000
$0.4116
$411.6
1500
$0.4074
$611.1
2000
$0.4032
$806.4
2500
$0.399
$997.5
ZUMT717TA Product Details
ZUMT717TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.A collector emitter saturation voltage of -185mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 240mV @ 100mA, 1.25A.Continuous collector voltages should be kept at -1.25A to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1.25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 220MHz.Breakdown input voltage is 12V volts.During maximum operation, collector current can be as low as 1.25A volts.
ZUMT717TA Features
the DC current gain for this device is 200 @ 500mA 2V a collector emitter saturation voltage of -185mV the vce saturation(Max) is 240mV @ 100mA, 1.25A the emitter base voltage is kept at 5V the current rating of this device is -1.25A a transition frequency of 220MHz
ZUMT717TA Applications
There are a lot of Diodes Incorporated ZUMT717TA applications of single BJT transistors.