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ZX5T949GTA

ZX5T949GTA

ZX5T949GTA

Diodes Incorporated

ZX5T949GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZX5T949GTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5.5A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZX5T949
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 500mA, 5.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage 210mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current -5.5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.42525 $0.42525
2,000 $0.39690 $0.7938
5,000 $0.37800 $1.89
ZX5T949GTA Product Details

ZX5T949GTA Overview


In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 210mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 500mA, 5.5A.Maintaining the continuous collector voltage at -5.5A is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 110MHz.This device can take an input voltage of 30V volts before it breaks down.When collector current reaches its maximum, it can reach 5.5A volts.

ZX5T949GTA Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz

ZX5T949GTA Applications


There are a lot of Diodes Incorporated ZX5T949GTA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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