ZXM66P02N8TC

new-10%

Manufacturer part number:ZXM66P02N8TC

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 20V 6.4A 8SOIC

Case Package:SOT-23

Datasheet:ZXM66P02N8TC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOW THRESHOLD
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	-8A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.56W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.56W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2068pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.4A Ta
Gate Charge (Qg) (Max) @ Vgs	43.3nC @ 4.5V
Rise Time	44.3ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	44.3 ns
Turn-Off Delay Time	118.4 ns
Continuous Drain Current (ID)	6.4A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	RoHS Compliant
Lead Free	Lead Free