ZXMC3F31DN8TA

new-10%

Manufacturer part number:ZXMC3F31DN8TA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R

Case Package:SOT-23

Datasheet:ZXMC3F31DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	1.8W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	1.9 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	608pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.8A 4.9A
Gate Charge (Qg) (Max) @ Vgs	12.9nC @ 10V
Rise Time	3ns
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	21 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.7A
Drain to Source Breakdown Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 4.5V Drive
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant