SI4946BEY-T1-E3

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SI4946BEY-T1-E3

Manufacturer part number:SI4946BEY-T1-E3

Manufacturer:Vishay Siliconix

Description:SI4946BEY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SI4946BEY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	41mOhm
Terminal Finish	MATTE TIN
Max Power Dissipation	2.4W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI4946
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Turn On Delay Time	10 ns
Power - Max	3.7W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	41m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6.5A
Threshold Voltage	2.4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.3A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	30A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	175°C
FET Feature	Logic Level Gate
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free